Optimization of the junction depth and doping of solar cell emitters-Reference-Cited by-同舟云学术

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Optimization of the junction depth and doping of solar cell emitters

Published:1991-12 Issue:6 Volume:31 Page:497-503
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Durán Julio César,Venier Guillermo,Weht Ruben

Publisher

Elsevier BV

Subject

General Engineering

Reference12 articles.

1. Proc. 19th IEEE Photovoltaic Specialists' Conf.;Green,1987

2. Proc. 19th IEEE Photovoltaic Specialists' Conf.;Basore,1987

3. 21st IEEE Photovoltaic Specialists' Conf.;Zhao,1990

4. An improved simple procedure for calculating the open-circuit voltage of passivated emitter silicon solar cells

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3. Impact of boron doping on electrical performance and efficiency of n-TOPCon solar cell;Solar Energy;2021-10

4. Effect of Doping Concentration on Conversion Efficiency of Silicon Based Nano-gap Near-field Thermophotovoltaic Cells;Journal of Physical Science;2018-11-15

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