Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells-Reference-Cited by-同舟云学术

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Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

Published:1987-10 Issue:2 Volume:22 Page:113-124
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Weinberg I.,Swartz C.K.,Hart R.E.,Ghandhi S.K.,Borrego J.M.,Parat K.K.,Yamaguchi M.

Publisher

Elsevier BV

Subject

General Engineering

Reference17 articles.

1. Radiation damage in InP single crystals and solar cells;Yamaguchi;J. Appl. Phys.,1984

2. High conversion efficiency and high radiation resistance InP homojunction solar cells;Yamamoto;Appl. Phys. Lett.,1984

3. Proc. 21st Int. Energy Conversion and Engineering Conf.;Weinberg,1986

4. Proc. 18th IEEE Photovoltaic Specialists' Conf.;Weinberg,1986

5. Near optimum design in InP homojunction solar cells;Goradia,1987

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Basic aspects of the temperature coefficients of concentrator solar cell performance parameters;Progress in Photovoltaics: Research and Applications;2012-05-09

2. Effect of proton irradiation and annealing on the diffusion length in indium phosphide;Journal of Applied Physics;1993-12

3. Radiation damage in InP solar cells;Solar Cells;1991-09

4. Surface recombination velocity and lifetime in InP;Solid-State Electronics;1991-01

5. InP solar cells for use in space;Solar Cells;1990-08

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