An improved simple procedure for calculating the open-circuit voltage of passivated emitter silicon solar cells-Reference-Cited by-同舟云学术

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An improved simple procedure for calculating the open-circuit voltage of passivated emitter silicon solar cells

Published:1987-12 Issue:4 Volume:22 Page:319-321
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Morales-Acevedo Arturo

Publisher

Elsevier BV

Subject

General Engineering

Reference5 articles.

1. Design, fabrication, and analysis of 17-18-percent efficient surface-passivated silicon solar cells

2. An analytic model for minority-carrier transport in heavily doped regions of silicon devices

3. Proc. 18th IEEE Photovoltaic Specialists' Conf.;Wolf,1986

4. Optimization of the surface impurity concentration of passivated emitter solar cells

5. Proc. 18th IEEE Photovoltaic Specialists' Conf.;Morales-Acevedo,1986

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of the junction depth and doping of solar cell emitters;Solar Cells;1991-12

2. The quantum collection efficiency of heavily doped emitters in silicon solar cells;Solar Cells;1990-05

3. Fermi degeneracy and its effects on the open‐circuit voltage of silicon solar cells;Journal of Applied Physics;1989-03

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