Sensitivity of HfO2-based RRAM Cells to Laser Irradiation-Reference-Cited by-同舟云学术

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Sensitivity of HfO2-based RRAM Cells to Laser Irradiation

Published:2021-11 Issue: Volume:87 Page:104376
ISSN:0141-9331
Container-title:Microprocessors and Microsystems
language:en
Short-container-title:Microprocessors and Microsystems

Author:

Petryk Dmytro,Dyka Zoya,Perez Eduardo,Kabin Ievgen,Katzer Jens,Schäffner Jan,Langendörfer Peter

Funder

Horizon 2020 Marie Skłodowska-Curie Actions

Publisher

Elsevier BV

Subject

Artificial Intelligence,Computer Networks and Communications,Hardware and Architecture,Software

Reference38 articles.

1. Memristor-The Missing Circuit Element;Chua;IEEE Transactions on Circuit Theory,1971

2. Electrical phenomena in amorphous oxide films;Dearnaley;Rep. Prog. Phys.,1970

3. Low-Frequency Negative Resistance in Thin Anodic Oxide Films;Hickmott;J. Appl. Phys.,1962

4. Redox-Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges;Waser;Adv. Mater.,2009

5. Optimizing Memory and Storage Support for Non-Volatile Memory Systems;Li,2019

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of swift heavy ion irradiation on the resistive random access memory performance of sputter deposited zinc rich zinc oxide thin films;Materials Science in Semiconductor Processing;2022-12

2. Laser Fault Injection Attacks against Radiation Tolerant TMR Registers;2022 IEEE 23rd Latin American Test Symposium (LATS);2022-09-05

3. Indigenous Fab-Lab Hybrid Device Integration for Phase Change Memory for In-Memory Computing;Communications in Computer and Information Science;2022

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