On the growth process of Cu2ZnSn(S,Se)4 absorber layer formed by selenizing Cu–ZnS–SnS precursors and its photovoltaic performance

Author:

Li Jianjun,Zhang Yi,Wang Hongxia,Wu Li,Wang Jiguo,Liu Wei,Zhou Zhiqiang,He Qing,Sun Yun

Funder

National Natural Science Foundation of China

University of China

Australian Research Council

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Preferred orientation of Cu(In,Ga)Se2 thin film deposited on stainless steel substrate;Li;Prog. Photovolt.: Res. Appl.,2013

2. Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process;Wang;Semicond. Sci. Technol.,2010

3. The path towards a high-performance solution-processed kesterite sola rcell;Mitzin;Sol. Energy Mater. Sol. Cells,2011

4. Progress in thin film solar cells based on Cu2ZnSnS4;Wang;Int. J. Photoenergy,2011

5. Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: first-principles insights;Chen;Appl. Phys. Lett.,2009

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