Surface morphology control of epitaxial silicon films grown by hot wire chemical vapor deposition using hydrogen dilution-Reference-Cited by-同舟云学术

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Surface morphology control of epitaxial silicon films grown by hot wire chemical vapor deposition using hydrogen dilution

Published:2010-03 Issue:3 Volume:94 Page:606-611
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Ryul Lee Seung,Min Ahn Kyung,Mo Kang Seung,Tae Ahn Byung

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Surface imperfection behavior during the SiH4 epitaxial growth process;Imai;J. Electrochem. Soc.,2000

2. Epitaxial thin-film Si solar cells;Beaucarne;Thin Solid Films,2006

3. Progress with polycrystalline silicon thin-film solar cells on glass at UNSW;Aberle;J. Cryst. Growth,2006

4. Optimisation of low-temperature silicon epitaxy on seeded glass substrates by ion-assisted deposition;Straub;J. Cryst. Growth,2005

5. Hot-wire chemical vapor deposition for epitaxial silicon growth on large-grained polycrystalline silicon templates;Mason;Thin Solid Films,2003

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Insights into nucleation engineering in Si pyramidal texturing for high performance heterojunction solar cells applications;Journal of Alloys and Compounds;2018-07

2. Growth of Si on Si(1 1 1)-7 × 7 at room temperature under laser substrate excitation;The European Physical Journal Applied Physics;2015-01

3. Analysing surface roughness evolution in thin films;Thin Film Growth;2011

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