Electron weak localization, and electron–phonon interaction in amorphous zinc-doped indium oxide films-Reference-Cited by-同舟云学术

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Electron weak localization, and electron–phonon interaction in amorphous zinc-doped indium oxide films

Published:2008-07 Issue:17 Volume:516 Page:5805-5808
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Makise K.,Funaki M.,Shinozaki B.,Yano K.,Shimane Y.,Inoue K.,Nakamura H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film

2. Preparation of transparent and conductive In2O3–ZnO films by radio frequency magnetron sputtering

3. Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn3In2O6 target

4. Electron Phonons;Ziman,1960

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1. Thickness Effects on Crystal Growth and Metal–Insulator Transition in Rutile‐Type RuO 2 (100) Thin Films;physica status solidi (b);2020-06-18

2. The temperature dependence of Hall mobility of the oxide thin film In2O3-ZnO;Journal of Physics: Conference Series;2012-12-17

3. Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature;Journal of Applied Physics;2012-10-15

4. Temperature dependence of resistance and thermopower of thin indium tin oxide films;Thin Solid Films;2010-09

5. Present status of amorphous In–Ga–Zn–O thin-film transistors;Science and Technology of Advanced Materials;2010-02

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