Origin of positive Vth shift and mobility effects in amorphous GaInZnO thin films-Reference-Cited by-同舟云学术

Origin of positive Vth shift and mobility effects in amorphous GaInZnO thin films

Published:2016-10 Issue: Volume:616 Page:456-460
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Heo Sung,Lee Dongwha,Kyoung Yong Koo,Kwon Young-Nam,Kim KiHong,Chung JaeGwan,Lee Jae Cheol,Park Gyeong Su,Oh Jong Soo,Tahir Dahlang,Kang Hee Jae,Cho Hoon Young

Funder

Dongguk University

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

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4. Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment;Park;Appl. Phys. Lett.,2007

5. Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4–x: optical analyses and first-principle calculations;Kamiya;Phys. Status Solidi C,2008

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