Deposition cycle of atomic layer deposition HfO2 film: Effects on electrical performance and reliability-Reference-Cited by-同舟云学术

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Deposition cycle of atomic layer deposition HfO2 film: Effects on electrical performance and reliability

Published:2013-01 Issue: Volume:528 Page:77-81
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Cheng Yi-Lung,Hsieh Cheng-Yang,Chang You-Ling

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Model for the charge trapping in high permittivity gate dielectric stacks

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si

4. A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing;Journal of Applied Physics;2024-03-27

2. Nanotechnology of Molecular Layering in Production of Inorganic and Hybrid Materials for Various Functional Purposes: II. Molecular Layering Technology and Prospects for Its Commercialization and Development in the XXI Century;Russian Journal of Applied Chemistry;2021-09

3. Effect of annealing temperature on electrical and reliability characteristics of HfO2/porous low-k dielectric stacks;Microelectronic Engineering;2016-08

4. Effect of High-Pressure Annealing on ALD HfO2/Si Interfacial Layer;Journal of Nanoelectronics and Optoelectronics;2016-04-01

5. Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials;Applied Surface Science;2015-11

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