Coupling of plasma and flow in materials processing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Two-dimensional modeling of high plasma density inductively coupled sources for materials processing
2. Two‐dimensional fluid model of an inductively coupled plasma with comparison to experimental spatial profiles
3. Two-dimensional direct simulation Monte Carlo (DSMC) of reactive neutral and ion flow in a high density plasma reactor
4. Effects of wall recombination on the etch rate and plasma composition of an etch reactor
5. Direct simulation Monte Carlo analysis of flows and etch rate in an inductively coupled plasma reactor
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1. Simulation by COMSOL of Effects of Probe on Inductively Coupled Argon Plasma;Brazilian Journal of Physics;2021-01-13
2. Comparison of CF4 and C4F8 gas etching profiles by multiscale simulation;Japanese Journal of Applied Physics;2015-01-29
3. Simulation of inductively coupled plasma with applied bias voltage using COMSOL;Vacuum;2014-11
4. Monte Carlo Cs+transport from a point source in negative ion sources: effect of the deuterium flow;Plasma Sources Science and Technology;2009-12-21
5. Numerical Modeling of an Ar–H2 Radio-Frequency Plasma Reactor under Thermal and Chemical Nonequilibrium Conditions;Plasma Chemistry and Plasma Processing;2007-02-22
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