Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy-Reference-Cited by-同舟云学术

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Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

Published:2013-05 Issue: Volume:534 Page:442-445
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Stolz A.,Soltani A.,Abdallah B.,Charrier J.,Deresmes D.,Jouan P.-Y.,Djouadi M.A.,Dogheche E.,De Jaeger J.-C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films

2. Effects of the buffer layers on the performance of (Al,Ga)N ultraviolet photodetectors

3. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

4. Piezoelectric aluminum nitride nanoelectromechanical actuators

5. Electro‐optical effect in aluminum nitride waveguides

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Doubly resonant metal-free electro-optic microwave receiver in aluminum nitride;Optica;2024-05-17

2. Reactive magnetron sputtered AlN thin films: structural, linear and nonlinear optical characteristics;Journal of Materials Science: Materials in Electronics;2023-05

3. Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition;Semiconductors;2018-02

4. Growth AlxGa1−xN films on Si substrates by magnetron sputtering and high ammoniated two-step method;Journal of Alloys and Compounds;2016-05

5. On the effectiveness of lateral excitation of shear modes in AlN layered resonators;Ultrasonics;2014-08

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