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Study on leakage current mechanism and band offset of high-k/n-InAlAs metal-oxide-semiconductor capacitors with HfO2 and HfAlO dielectric

  • Published:2018-09 Issue: Volume:661 Page:137-142
  • ISSN:0040-6090
  • Container-title:Thin Solid Films
  • language:en
  • Short-container-title:Thin Solid Films

Author:

Guan He,Lv Hongliang

Funder

The Shannxi National Science Foundation, China

The National Natural Science Foundation youth science fund, China

The Shannxi Province Science Foundation, China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications;Moschetti;IEEE Microw. Wireless Components Lett.,2012

2. Vasallo, Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors;Vasallo;Semicond. Sci. Technol.,2012

3. Gate-Recess Technology for InAs/AlSb HEMTs;Lefebvre;IEEE Trans. Electron. Dev.,2009

4. Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications;Malmkvist;IEEE Trans. on Microw. Theory Tech.,2009

5. ESA deep space cryogenic LNAs Past, present and future;Halte,2012
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