Oxidation mechanism of ionic transport of copper in SiO2 dielectrics-Reference-Cited by-同舟云学术

Oxidation mechanism of ionic transport of copper in SiO2 dielectrics

Published:2004-11 Issue:1-2 Volume:467 Page:284-293
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Willis Brian G.,Lang David V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Copper Metallization for High Performance Silicon Technology

2. Copper metallization for ULSL and beyond

3. Copper-Fundamental Mechanisms for Microelectronic Applications;Murarka,2000

4. CRC Handbook of Chemistry and Physics,2002

5. “Leakage and Breakdown Reliability Issues Associated with Low-K Dielectrics in a Dual-Damascene Cu Process”, 38th IEEE Annual International Reliability Physics Symposium Proceedings (IRPS), San Jose, CA, April 10–13;Tsu,2000

Cited by 77 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First principles reaction processes of Co(CO)3NO as an atomic layer deposition precursor on SiO2 and Co surfaces;Journal of Vacuum Science & Technology A;2024-07-29

2. In-situ temperature-dependent sheet resistance study of Cu films in oxygen ambient for heterogeneous integrations;Nanotechnology;2024-02-02

3. Implementation of Bayesian networks and Bayesian inference using a Cu_0.1Te_0.9/HfO₂/Pt threshold switching memristor;Nanoscale Advances;2024

4. Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEM;ACS Applied Electronic Materials;2023-03-08

5. Anodic oxidation effects at the copper/silicon oxide interface;Memories - Materials, Devices, Circuits and Systems;2022-07