Effect of furnace annealing on the ferroelectricity of Hf0.5 Zr0.5O2 thin films

Author:

Shekhawat AniruddhORCID,Walters Glen,Chung Ching-Chang,Garcia Roberto,Liu Yang,Jones Jacob,Nishida Toshikazu,Moghaddam Saeed

Funder

NSF

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference62 articles.

1. Ferroelectric hafnium oxide based materials and devices: assessment of current status and future prospects;Muller;ECS J. Solid State Sci. Technol.,2015

2. Influence of A12O3 diffusion barrier and PbTiO3 seed layer on microstructural and ferroelectric characteristics of PZT thin films by sol-gel spin coating method;Kim;Thin Solid Films,1997

3. Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si(111) sample;Zhu;Chin. J. Chem.,2000

4. Phase transitions in ferroelectric silicon doped hafnium oxide;Boscke;Appl. Phys. Lett.,2011

5. Ferroelectricity in Gd-doped HfO2 thin films;Mueller;ECS J. Solid State Sci. Technol.,2012

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