Effect of furnace annealing on the ferroelectricity of Hf0.5 Zr0.5O2 thin films
Author:
Funder
NSF
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference62 articles.
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4. Phase transitions in ferroelectric silicon doped hafnium oxide;Boscke;Appl. Phys. Lett.,2011
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2. Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D‐STEM and Automated Diffraction Indexing;Small Methods;2024-05-16
3. Improvement in the polarization properties in thin ferroelectric Hf0.5Zr0.5O2 films by two-step flash lamp annealing;Japanese Journal of Applied Physics;2024-02-01
4. Review on the Microstructure of Ferroelectric Hafnium Oxides;physica status solidi (RRL) – Rapid Research Letters;2022-08-07
5. Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions;Nanotechnology;2021-09-08
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