Bandgap modulation and electrical characteristics of (AlxGa1−)2O3/4H-SiC thin film heterostructures-Reference-Cited by-同舟云学术

Bandgap modulation and electrical characteristics of (AlxGa1−)2O3/4H-SiC thin film heterostructures

Published:2022-07 Issue: Volume:754 Page:139276
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lee Hee-Jae,Shin Myeong-Cheol,Moon Soo-Young,Byun Dong-Wook,Kim Min-Yeong,Lee Hyung-Jin,Lee Geon-Hee,Jung Seung-Woo,Schweitz Michael A.^ORCID,Park JoonHui,Rim Youseung,Koo Sang-Mo

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference51 articles.

1. Current status of Ga2O3power devices;Higashiwaki;Jpn. J. Appl. Phys.,2016

2. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes;Konishi;Appl. Phys. Lett.,2017

3. Recent progress in Ga2O3power devices;Higashiwaki;Semicond. Sci. Technol.,2016

4. Recent progress on the electronic structure, defect, and doping properties of Ga2O3;Zhang;APL Mater,2020

5. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy;Ahmadi;Appl. Phys. Express.,2017

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, Optical, and Electronic Properties of Epitaxial β‐(Al_xGa_1‐_x)₂O₃ Films for Optoelectronic Devices;Advanced Optical Materials;2024-04-30

2. (AlxGa1-x)2O3-based materials: Growth, properties, and device applications;Journal of Alloys and Compounds;2023-10

3. Improved Properties of Post-Deposition Annealed Ga2O3/SiC and Ga2O3/Al2O3/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering;Micro;2023-09-30

4. Solar-blind UV Schottky barrier photodetectors formed by Au/Ni on β-(Al_xGa_1−x)₂O₃/AlGaN heterostructures;Journal of Materials Chemistry C;2023