The effect of Cr atoms: From non-stoichiometric Ge-Te to Cr2Ge2Te6-Reference-Cited by-同舟云学术

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The effect of Cr atoms: From non-stoichiometric Ge-Te to Cr2Ge2Te6

Published:2023-10 Issue: Volume:783 Page:140062
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Zheng Long^ORCID,Wu Xiaoqing,Xue Jianzhong,Pei MingXu,Ma Jinyuan,Zhu Xiaoqin

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Natural Science Foundation of Gansu Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Memristive technologies for data storage, computation, encryption, and radio-frequency communication;Lanza;Science,2022

2. Fabrication of stable multi-level resistance states in a Nb-doped Ge2Sb2Te5 device;Zheng;J. Mater. Chem. C,2023

3. Resistance Drift Convergence and Inversion in Amorphous Phase Change Materials;Pries;Adv. Funct. Mater.,2022

4. Reversible phase-change characteristics and structural origin in Cr doped Ge2Sb2Te5 thin films;Wei;Thin Solid Films,2020

5. Ultrafast phase change speed and high thermal stability of antimony and zinc co-sputtering thin film for phase change random access memory application;Liu;Thin Solid Films,2022

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