Forbidden energy band gap in diluted a-Ge1−xSix:N films-Reference-Cited by-同舟云学术

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Forbidden energy band gap in diluted a-Ge1−xSix:N films

Published:2012-06 Issue:16 Volume:520 Page:5463-5465
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Guarneros C.,Rebollo-Plata B.,Lozada-Morales R.,Espinosa-Rosales J.E.,Portillo-Moreno J.,Zelaya-Angel O.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Growth and applications of Group III-nitrides

2. Microscopic analysis of the compressibility in the spinel phase of Si 3 N 4

3. Synthesis of a cubic Ge3N4 phase at high pressures and temperatures

4. Narrow band gap group III-nitride alloys

5. Computer-aided band gap engineering and experimental verification of amorphous silicon–germanium solar cells

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of the finite-temperature anisotropic elastic and thermal properties of Ge3N4: A first-principles study;Computational Condensed Matter;2014-12

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