Changes of PbSnTe thin film thickness due to the oxidation by different methods-Reference-Cited by-同舟云学术

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Changes of PbSnTe thin film thickness due to the oxidation by different methods

Published:2015-09 Issue: Volume:591 Page:346-350
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Berchenko N.,Trzyna M.,Adamiak S.,Bochnowski W.,Sakseev D.,Dziedzic A.,Cebulski J.

Funder

Podkarpackie Regional Operational Programme

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Enhanced Seebeck coefficient through energy-barrier scattering in PbTe nanocomposites;Martin;Phys. Rev. B,2009

2. The Electrodeposition of PbTe Nanowires for Thermoelectric Applications;Hillman,2012

3. Growth and properties of native oxides for IV–VI optoelectronic devices;Berchenko;Mater. Sci. Mater. Prop. Infrared Opto Electr.,1997

4. Raman scattering in PbTe and PbSnTe Films: In situ phase transformations;Volodin;Semiconductors,2014

5. An electrolytic polish and etch for lead telluride;Norr;J. Electrochem. Soc.,1962

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1. The early nucleation of a eutectic alloy during high-energy milling;Materials Research Express;2018-07-11

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