Physical and electrical properties of ZrO2 and YSZ high-k gate dielectric thin films grown by RF magnetron sputtering-Reference-Cited by-同舟云学术

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Physical and electrical properties of ZrO2 and YSZ high-k gate dielectric thin films grown by RF magnetron sputtering

Published:2005-03 Issue:1-2 Volume:475 Page:354-358
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Jeong S.H.,Bae I.S.,Shin Y.S.,Lee S.-B.,Kwak H.-T.,Boo J.-H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Pushing the Limits

2. Temperature dependence of gate currents in thin Ta2O5 and TiO2 films

3. Annealing characteristics of ultra-thin high- K HfO 2 gate dielectrics

4. Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

5. Electrical Properties of Single Crystalline CeO2High-k Gate Dielectrics Directly Grown on Si (111)

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1. Low-temperature solution-processed high-capacitance AlOx dielectrics for low-voltage carbon-based transistors;Organic Electronics;2022-11

2. Solid state deoxidation of zirconium-oxygen solid solution using a combination of metallic Ca and Y in CaCl2 flux;Journal of Alloys and Compounds;2022-10

3. Influence of Annealing Temperature on ZrO₂ Nanoparticles for Improved Photodetection;IEEE Electron Device Letters;2022-06

4. Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °C;APL Materials;2022-03-01

5. An Accurate Model of Threshold Voltage and Effect of High-K Material for Fully Depleted Graded Channel DMDG MOSFET;Silicon;2022-02-07

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