50 nm metamorphic GaAs and InP HEMTs

Author:

Thayne Iain,Elgaid Khaled,Moran David,Cao Xin,Boyd Euan,McLelland Helen,Holland Martin,Thoms Stephen,Stanley Colin

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack

2. Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique

3. Novel high uniformity highly reproducible non-selective wet digital gate recess etch process for InP HEMTs

4. Presented at GaAs 04, Amsterdam, The Netherlands, October;Boyd,2004

5. D.A.J. Moran, P. Steinmann, H. McLelland, F. McEwan, K. Elgaid, C.R.Stanley, I.G.Thayne, The role of parasitics in short gate length InP HEMT technology using self-aligned T-gate and non-annealed ohmic technologies IEEE Trans. Electron Devices (in press).

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1. GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review;Microelectronics Journal;2019-10

2. Modulation-Doped Field-Effect Transistors (MODFET);Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19

3. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23

4. Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-03

5. InAlAs/InGaAs MHEMT degradation during DC and thermal stressing;2010 IEEE International Reliability Physics Symposium;2010

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