Direct observation of crystallization of HfO2 promoted on silicon surfaces in gate dielectric stacks-Reference-Cited by-同舟云学术

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Direct observation of crystallization of HfO2 promoted on silicon surfaces in gate dielectric stacks

Published:2012-01 Issue:7 Volume:520 Page:2562-2565
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kim Suhyun,Oshima Yoshifumi,Nakajima Nobue,Hashikawa Naoto,Asayama Kyoichiro,Takayanagi Kunio

Funder

Ministry of Education, Culture, Sports, Science and Technology of Japan

Nanotechnology Network Project of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Study of sputtered HfO2 thin films on silicon

2. Hafnium and zirconium silicates for advanced gate dielectrics

3. Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

4. Dielectric property and thermal stability of HfO2 on silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural changes in HfSe₂ and ZrSe₂ thin films with various oxidation methods;Journal of Materials Chemistry C;2024

2. Structure, thermodynamics, and crystallization of amorphous hafnia;Journal of Applied Physics;2015-09-28

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