Electrical behavior of p-type PbS-based metal-oxide-semiconductor thin film transistors-Reference-Cited by-同舟云学术

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Electrical behavior of p-type PbS-based metal-oxide-semiconductor thin film transistors

Published:2010-10 Issue:1 Volume:519 Page:512-516
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Morales-Fernández I.E.,Medina-Montes M.I.,González L.A.,Gnade B.,Quevedo-López M.A.,Ramírez-Bon R.

Funder

Consejo Nacional de Ciencia y Tecnología

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Thin Film Transistors;Howard,2003

2. J.E. Lilienfeld, US Patent No. 1,900,018 (1933).

3. A Study of Rectification Effects at Surfaces of Germanium and Lead Sulphide

4. Pbs-field-effect-transistor for heavy metal concentration monitoring

5. Field effect enhanced signal-to-noise ratio in chemically deposited PbS thin films on Si3N4/n-Si substrates

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1. P‐Type 2D Semiconductors for Future Electronics;Advanced Materials;2023-02-28

2. Morphological, structural, and electrical properties of PbS thin films deposited on HfO2, SiO2, and Al2O3 for TFTs applications;Ceramics International;2021-07

3. Experimental and Ab Initio Investigation of the Physical Properties of PbS Thin Films Prepared by Chemical Bath Deposition (CBD);Brazilian Journal of Physics;2021-04-28

4. Chemically deposited PbS thin films by reaction media with glycine for use in photovoltaics;Materials Science in Semiconductor Processing;2021-01

5. Wide Band Gap Chalcogenide Semiconductors;Chemical Reviews;2020-04-06

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