Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

Author:

Kaushik J.K.ORCID,Balakrishnan V.R.,Mongia D.,Kumar U.,Dayal S.,Panwar B.S.,Muralidharan R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. 40-W/mm double field-plated GaN HEMTs;Wu,2006

2. Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications;Shinohara;IEEE Trans. On Electron Devices,2013

3. Effect of pinch-off current leakage characteristics on microwave power performances of AlxGa1-xN/GaN HEMTs;Peng;Solid State Electron.,2013

4. Thermionic Trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN/GaN HEMTs;Sathaiya;J. Appl. Phys.,2006

5. Current collapse transient behavior and its mechanism in submicron-gate AlGaN/GaN heterostructure transistors;Hasegawa;J. Vac Sci Technol. B,2009

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