Investigation of thermal effects in copper chemical mechanical polishing

Author:

Liu Pengzhan,Bae Sunghoon,Hong Seokjun,Bae Chulwoo,Seo Hyeonmin,Lee Jungryul,Tang Cheng,Kim Taesung

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

General Engineering

Reference26 articles.

1. 450 mm silicon: an opportunity and wafer scaling;Watanabe;Interface-Electrochem Soc,2006

2. The way to zeros: the future of semiconductor device and chemical mechanical polishing technologies;Tsujimura;Jpn J Appl Phys,2016

3. Characterization and modeling of dynamic thermal behavior in CMP;White;J Electrochem Soc,2003

4. Effects of temperature on removal rate in Cu CMP;Park;J Kor Soc Manuf Process Eng,2018

5. Investigation of the pad-conditioning performance deterioration in the chemical mechanical polishing process;Kim;Wear,2017

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