Metal–Semiconductor Field Effect Transistors-Reference-Cited by-同舟云学术

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Metal–Semiconductor Field Effect Transistors

Published:2001 Issue: Volume: Page:5521-5525
ISSN:
Container-title:Encyclopedia of Materials: Science and Technology
language:
Short-container-title:

Author:

Greve D.W.

Publisher

Elsevier

Reference7 articles.

1. The development of the first LSI GaAs integrated circuits and the path to the commercial market;Eden;Proc. IEEE,1988

2. Super-low-noise performance of direct-ion-implanted 0.25μm-gate GaAs MESFETs. IEEE Electron;Feng;Device Lett,1992

3. A gigasample/second 5-b ADC with on-chip track and hold based on an industrial 1μm MESFET E/D process;Hagelauer;IEEE J. Solid-state Circuits,1992

4. A 20K GaAs array with 10K of embedded RAM;Hinds;IEEE J. Solid-State Circuits,1991

5. U-band monolithic millimetre-wave GaAs MESFET power amplifier;Ho;Electron. Lett,1992

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