1. CCl4 doping of GaN grown by molecular beam epitaxy;Abernathy;Appl. Phys. Lett,1995
2. Defect energy levels in electron-irradiated and deuterium-implanted 6H silicon carbide;Aboelfotoh;Phys. Rev. B,1999
3. Carbon vacancy in SiC: a negative U system;Bechstedt;Europhys. Lett,1998
4. Studies of carbon as alternative p-type dopant for GaN;Birkle;MRS Internet J. Nitride Semicond. Res,1999
5. Ab initio study of intrinsic point defects and dopant–defect complexes in SiC: application to boron diffusion;Bockstedte;Materials Science Forum,2000