Author:
Ten Kate W.R.Th.,Audet S.A.
Cited by
9 articles.
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1. Rapid thermal process-induced defects in silicon position detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1994-01
2. The influence of preamorphization on the properties of shallow p+ n-junctions in silicon radiation detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1993-03
3. Processing high-quality silicon for microstrip detectors;Sensors and Actuators A: Physical;1992-04
4. Compatibility between bipolar readout electronics and microstructures in silicon;Sensors and Actuators A: Physical;1992-03
5. Optimization of the energy resolution of the diffusion based nuclear radiation sensors;Microelectronic Engineering;1991-10