Design of Novel Capacitive RF MEMS Shunt Switch with Aluminum Nitride (AlN) Dielectric-Reference-Cited by-同舟云学术

Design of Novel Capacitive RF MEMS Shunt Switch with Aluminum Nitride (AlN) Dielectric

Published:2014 Issue: Volume:6 Page:692-700
ISSN:2211-8128
Container-title:Procedia Materials Science
language:en
Short-container-title:Procedia Materials Science

Author:

Reddy B. Laxma,Shanmuganantham T.

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference15 articles.

1. Capacitive RF MEMS Switches With Tantalum-Based Materials;Anna Persano;IEEE Journal Of Microelectromechanical Systems,2011

2. Mechanically Coupled Low-Voltage Electrostatic Resistive RF Multithrow Switch, IEEE Trans;Che-Heung;On Industrial Elctronics,2012

3. RF MEMS Theory;Gabriel,2007

4. Dilectric charging in radio frequency microelectromechanical system capacitive switches: A study of material properties and device performance;Papaioannou;Appl. Phys.Lett,2007

5. Invesigation of charging mechanisms in RF MEMS capacitive switches with silicon nitride:The Effect of Material Stoichiometry;Papaioannou;IEEE Int. Conf. On Microwave Symposium Digest,2009

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