Numerical modeling of carbon distribution and precipitation during directional solidification of photovoltaic silicon
Author:
Funder
Université Grenoble Alpes
Publisher
Elsevier BV
Subject
Fluid Flow and Transfer Processes,Mechanical Engineering,Condensed Matter Physics
Reference15 articles.
1. Removal of C/Si from liquid silicon by directional solidification;Muhlbauer;J. Cryst. Growth,1991
2. Oxygen and carbon transfer during solidification of semiconductor grade silicon in different processes;Ribeyron;J. Cryst. Growth,2000
3. Modelling of the transition from planar faceted front to equiaxed growth: application to photovoltaic polycrystalline silicon;Mangelinck-Noel;J. Cryst. Growth,2008
4. Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells;Liu;J. Cryst. Growth,2008
5. The influence of growth rate on formation and avoidance of C and N related precipitates during directional solidification of multicrystalline silicon;Trempa;J. Cryst. Growth,2010
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1. Diffusion coefficients of carbon, oxygen and nitrogen in silicon melt;Journal of Crystal Growth;2022-02
2. Effect of Argon Flow on Oxygen and Carbon Coupled Transport in an Industrial Directional Solidification Furnace for Crystalline Silicon Ingots;Crystals;2021-04-14
3. Numerical Simulation Study on the Front Shape and Thermal Stresses in Growing Multicrystalline Silicon Ingot: Process and Structural Design;Crystals;2020-11-19
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