On the determination of diffusion coefficients in two-component alloys and doped semiconductors. Several implications concerning the International Space Station-Reference-Cited by-同舟云学术

On the determination of diffusion coefficients in two-component alloys and doped semiconductors. Several implications concerning the International Space Station

Published:2015-07 Issue: Volume:86 Page:508-518
ISSN:0017-9310
Container-title:International Journal of Heat and Mass Transfer
language:en
Short-container-title:International Journal of Heat and Mass Transfer

Author:

Sánchez O.,Ruiz X.,Pujalte M.,Mercader I.,Batiste O.,Gavaldà Jna.

Publisher

Elsevier BV

Subject

Fluid Flow and Transfer Processes,Mechanical Engineering,Condensed Matter Physics

Reference75 articles.

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3. On the accuracy of the diffusion coefficient measurements using different initial shear cell configurations at low and moderate Rayleigh numbers;Ruiz;Int. J. Heat Mass Transf.,2012

4. Germanium-silicon single cystal growth by the axial heat processing (AHP) technique;Dario;J. Cryst. Growth,2011

5. Chemical diffusion experiments in AlNiCe-melts;Griesche;Mater. Sci. Forum,2006

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