Stochastic model and simulation of GaN nanowires formation characterized by long incubation time followed by burst nucleation and growth-Reference-Cited by-同舟云学术

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Stochastic model and simulation of GaN nanowires formation characterized by long incubation time followed by burst nucleation and growth

Published:2022-10 Issue: Volume:213 Page:111664
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Sabelfeld K.K.^ORCID,Kablukova E.G.^ORCID

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference19 articles.

1. In situ investigation of self-induced GaN nanowire nucleation on Si;Chèze;Appl. Phys. Lett.,2010

2. Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: A comprehensive description of the temporal evolution of GaN nanowire ensembles;Fernandez-Garrido;Nano Lett.,2015

3. Nucleation, growth, and bundling of GaN nanowires in molecular beam epitaxy: Disentangling the origin of nanowire coalescence;Kaganer;Nano Lett.,2016

4. In situ study of self-assembled GaN nanowires nucleation on si(111) by plasma-assisted molecular beam epitaxy;Hestroffer;Appl. Phys. Lett.,2012

5. Physical origin of the incubation time of self-induced GaN nanowires;Consonni;Appl. Phys. Lett.,2011

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