The physical properties of RbAuX (X = S, Se, Te) novel chalcogenides for advanced optoelectronic applications: An ab-initio study-Reference-Cited by-同舟云学术

The physical properties of RbAuX (X = S, Se, Te) novel chalcogenides for advanced optoelectronic applications: An ab-initio study

Published:2023-03 Issue: Volume:221 Page:112098
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Salman Khan Muhammad,Gul Banat,Khan Gulzar,Ahmad Hijaz,Almohsen Bandar

Funder

King Saud University

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

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4. Investigating the optoelectronic and thermoelectric nature of IrSbX (X = S, Se, and Te) TMC's semiconductors: By employing the accurate modified Becke-Johnson exchange potential;Khan;Mater. Sci. Semicond. Process.,2022

5. Atomic Ordering and Gap Formation in Ag-Sb-Based Ternary Chalcogenides;Hoang;Phys. Rev. Lett.,2007

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