Influence of point defects on optical properties of GaN-based materials by first principle study-Reference-Cited by-同舟云学术

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Influence of point defects on optical properties of GaN-based materials by first principle study

Published:2017-03 Issue: Volume:129 Page:49-54
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Li Linsen,Yu Jiadong,Hao Zhibiao,Wang Lai,Wang Jian,Han Yanjun,Li Hongtao,Xiong Bing,Sun Changzheng,Luo Yi

Funder

National Basic Research Program of China

National Natural Science Foundation of China

National High-tech R&D Program of China

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference32 articles.

1. 40% efficient metamorphic GaInP/GaInAs/gemultijunction solar cells;King;Appl. Phys. Lett.,2007

2. The physics of low-dimensional semiconductors;Davies;Cañamo Rev. De La Cultura Del Cannabis,1998

3. Defect and interfaces in GaN epitaxy;Ponce;MRS Bull.,1997

4. Calculations of carrier localization in InxGa1−xN;Wang;Phys. Rev. B: Condens. Matter,2001

5. First-principles calculations for defects and impurities: applications to III-nitrides;Walle;J. Appl. Phys.,2004

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