Dynamics of reactions inhibiting epitaxial growth of Si(100) surfaces via interaction with hydrogen chloride
Author:
Publisher
Elsevier BV
Subject
Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science
Reference20 articles.
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2. On the mechanism of homogeneous decomposition of the chlorinated silanes. Chain reactions propagated by divalent silicon species;Swihart;J. Phys. Chem. A,1998
3. Analysis of the gas phase reactivity of chlorosilanes;Ravasio;J. Phys. Chem. A,2013
4. A gas-phase and surface kinetics model for silicon epitaxial growth with SiH2Cl2 in an RTCVD reactor;Hierlemann;J. Electrochem. Soc.,1995
5. Analysis of the dynamics of SiCl2 at Si(100) surfaces;Anzai;App. Surf. Sci.,2017
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4. Pressure dependence of rate coefficients of unimolecular and chemical activation reactions connected to the potential energy wells of chlorinated monosilanes by RRKM calculations;International Journal of Chemical Kinetics;2021-05-17
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