Advanced Transistor Process Technology from 22- to 14-nm Node
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Publisher
InTech
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http://www.intechopen.com/download/pdf/62046
Reference19 articles.
1. Vasileska D, Goodnick SM. Computational electronics. Synthesis Lectures on Computational Electromagnetics. 1st ed. San Rafael, CA, USA: Morgan & Claypool Publishers; 2006. 20 p. 1-216. DOI: 10.2200/s00026ed1v01y200605cem006
2. Qin C, Yin H, Wang G. Study of sigma-shaped source/drain recesses for embedded-SiGe pMOSFETs. Microelectronic Engineering. 2017;181:22-28. DOI: 10.1016/j.mee.2017.07.001
3. Wang G, Abedin A, Moeen M. Integration of highly-strained SiGe materials in 14nm and beyond nodes FinFET technology. Solid-State Electronics. 2015;103:222-228. DOI: 10.1016/j.sse.2014.07.008
4. Radamson HH, Kolahdouz M. Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs. Journal of Materials Science: Materials in Electronics. 2015;26(7):4584-4603. DOI: 10.1007/s10854-015-3123-z
5. Qin C, Wang G, Kolahdouz M. Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14nm node FinFETs. Solid-State Electronics. 2016;124:10-15. DOI: 10.1016/j.sse.2016.07.024
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