Recording of Micro/Nanosized Elements on Thin Films of Glassy Chalcogenide Semiconductors by Optical Radiation

Abstract

Inorganic resists based on chalcogenide glassy semiconductor (CGS) films can be effectively used in the creation of micro- and nanoelements of optoelectronic devices, micro- and nanoelectromechanical systems, and diffractive optical elements. The use of these materials is based mainly on their sensitivity to different types of radiation, which causes phase and structural changes in CGS films, and transparency in the infrared range. A number of photoinduced changes are observed in CGS, which are associated with structural transformations, phase transitions, defect formation, and atomic diffusion. It is important to determine technologies for the formation of micro- and nanoscale structures on CGS films, which can be used in the creation of diffractive optical elements for optoelectronic devices. Increasing the resolution of recording media based on vitreous chalcogenide semiconductors can be achieved by choosing the recording modes and composition of glasses, in which the strongest nonlinearity of the exposure characteristics of photosensitive material, as well as the introduction into the structure of recording media nanoparticles of noble metals for excitation of plasmonic resonance.