Chemical Vapor Deposition Synthesis of Graphene on Copper Foils

Abstract

Chemical vapor deposition (CVD) represents a viable synthesis route to produce good-quality, large-area graphene films. In simple words, the technique relies on the thermal decomposition of a carbon-rich source and the further deposition of carbon atoms in a honeycomb pattern on top of a metallic catalyst film. Due to the versatility of the method, many alternatives have been explored for the synthesis of this amazing carbon 2D nanomaterial: low pressure, atmospheric pressure, roll-to-roll. Different catalysts have been explored as well; however, copper (Cu) represents the prime choice, being micrometer-thick foils the most commonly used form in CVD experiments. This chapter focuses on the production of graphene via the CVD method using copper foils, and it commences by explaining the generalities of the technique and its variants; next, a description of the method for the production of graphene using copper is included as well as the different precursors (gas, liquid, solid) that have been reported for its synthesis; we continue explaining the importance of the other gases involved in the synthesis and the efforts toward production of large-size single crystals; the obliged transfer process is reviewed, and we conclude by analyzing the advantages and the challenges of the technique.