Atomic Arrangement of the Clean Si(110) 5x1 Surface Derived by Low Energy Scattering Spectroscopy

Abstract

The atomic arrangement of the Si(llO) 5x1 reconstructed surface has been studied by low energy ion scattering. The experimentally measured incident angle scan data were compared with the results of computer simulations for various structural models. Although detailed quantitative interpretation of the full range of ion scattering data is difficult to achieve, there is clear evidence for a major reconstruction of the surface. A reasonable fit for the adatom model between the experimental results and computer simulation suggests that the clean Si(llO) 5x1 surface consists of a mixture of 5x1, 5x4 and 5x5 structures, possibly partially disordered along the [flO] direction. The different adatom and rest atom sites have been determined by fitting the calculation with the experimental data. However, there is no other existing experimental evidence, at this time, to support the adatom or rest atom height.