Orthodox Theory Monte-Carlo Simulation of Single-Electron Logic Circuits

Abstract

In the past decades MOS based digital integrated logic circuits have undergone a successful process of miniaturisation eventually leading to dimensions of a few nanometres. With the dimensions in the range of a few atomic radii the end of conventional MOS technology is approaching. Amongst the prospective candidates for sub 10nm logic are integrated logic circuits based on single-electron devices. In our contribution we present the use of MOSES (Monte-Carlo Single-Electronics Simulator) as a method for simulation of complementary single-electron logic circuits based on the orthodox theory. Simulations of single-electron devices including a single-electron box, a single-electron transistor and a complementary single-electron inverter were carried out. Their characteristics were evaluated at different temperatures and compared to measurement results obtained at other institutions. The potential for room-temperature operation was also assessed.