Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM-Reference-Cited by-同舟云学术

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Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

Published:2019-06 Issue: Volume: Page:
ISSN:
Container-title:2019 Symposium on VLSI Circuits
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Author:

Garello K.,Yasin F.,Hody H.,Couet S.,Souriau L.,Sharifi S. H.,Swerts J.,Carpenter R.,Rao S.,Kim W.,Wu J.,Sethu K. K. V.,Pak M.,Jossart N.,Crotti D.,Furnemont A.,Kar G. S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8766307/8777931/08778100.pdf?arnumber=8778100

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of a NAND-Like SOT-MRAM Multi-Level Cell with Two Operational Modes;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

2. A Survey of Emerging Memory in a Microcontroller Unit;Micromachines;2024-04-01

3. Write Error Rates of Field-Assisted Spin-Orbit-Torque Switching of Perpendicular Magnetic Tunnel Junctions;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

4. High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers;Applied Physics Letters;2024-02-12

5. Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories;IEEE Journal on Exploratory Solid-State Computational Devices and Circuits;2024

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