Optical Transition Energy of InAs/GaSb Type-II Superlattice Investigated by Using Photoluminescence and Photoreflectance Spectroscopy-Reference-Cited by-同舟云学术

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Optical Transition Energy of InAs/GaSb Type-II Superlattice Investigated by Using Photoluminescence and Photoreflectance Spectroscopy

Published:2023-09-24 Issue: Volume: Page:
ISSN:
Container-title:2023 28th Microoptics Conference (MOC)
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Author:

Yatabe Tatsuhiko¹,Taketa Nana¹,Arai Masakazu¹,Maeda Kouji¹,Ikari Tetsuo¹,Fukuyama Atsuhiko¹

Affiliation:

1. University of Miyazaki 1-1, Gakuen-kibanadai-nishi, Miyazaki-shi,Faculty of Engineering,Miyazaki,Japan,889-2155

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10302729/10302732/10302909.pdf?arnumber=10302909

Reference3 articles.

1. Zinc-blende and wurtzite phase separation in catalyst-free molecular beam epitaxy vapor–liquid–solid-grown Si-doped GaAs nanowires on a Si(111) substrate induced by Si doping

2. InAs/GaSb superlattice infrared detectors

3. Infrared detectors: an overview

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