Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based “W”-Laser Structures-Reference-Cited by-同舟云学术

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Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based “W”-Laser Structures

Published:2022-10-16 Issue: Volume: Page:
ISSN:
Container-title:2022 28th International Semiconductor Laser Conference (ISLC)
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Author:

Duffy Dominic A.¹,Marko Igor P.²,Fuchs Christian²,Hepp Thilo²,Lehr Jannik²,Volz Kerstin²,Stolz Wolfgang²,Sweeney Stephen J.²

Affiliation:

1. Advanced Technology Institute, University of Surrey,Department of Physics,Guildford,United Kingdom,GU2 7XH

2. Philipps-Universität Marburg,Materials Sciences Center,Department of Physics,Marburg,Germany,35032

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9943281/9943297/09943462.pdf?arnumber=9943462

Reference9 articles.

1. Performance characteristics of low threshold current 1.25 μm type-II GaInAs/GaAsSb ‘W’-lasers for optical communications

2. Mechanism of suppression of Auger recombination processes in type‐II heterostructures

3. Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers

4. Characterization of semiconductor laser gain media by the segmented contact method

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