High Temperature Operation of Membrane Photonic Integrated Circuits with Buried-Ridge-Waveguide on Si
Author:
Affiliation:
1. Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Tokyo,Japan,152-8552
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9943281/9943297/09943308.pdf?arnumber=9943308
Reference5 articles.
1. Lateral confinement enhanced membrane laser on Si with a buried-ridge-waveguide structure
2. Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode
3. Reduced Thermal Resistance of Membrane Fabry-Perot Laser Bonded on Si Through Room-Temperature, Surface-Activated Bonding Assisted by a-Si Nano-Film
4. Monolithic Integration of Membrane-Based Butt-Jointed Built-in DFB Lasers and p-i-n Photodiodes Bonded on Si Substrate
5. 20-Gbit/s direct modulation of GaInAsP/InP membrane distributed-reflector laser with energy cost of less than 100 fJ/bit
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