Low threshold current operation of membrane DR laser on Si with buried-ridge waveguide and ACPM grating for On-chip Optical Interconnection
Author:
Affiliation:
1. Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Tokyo,Japan,152-8552
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9943281/9943297/09943381.pdf?arnumber=9943381
Reference6 articles.
1. Lateral confinement enhanced membrane laser on Si with a buried-ridge-waveguide structure
2. High Efficiency Operation of GaInAsP/InP Membrane Distributed-Reflector Laser on Si
3. Reduced Thermal Resistance of Membrane Fabry-Perot Laser Bonded on Si Through Room-Temperature, Surface-Activated Bonding Assisted by a-Si Nano-Film
4. 28-Gb/s Directly Modulated InGaAlAs ACPM DFB Lasers with High Mask Margin of 22% at 55°C
5. 20-Gbit/s direct modulation of GaInAsP/InP membrane distributed-reflector laser with energy cost of less than 100 fJ/bit
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