Temperature Monitoring of Multi-Chip SiC MOSFET Modules: On-Chip RTDs vs. V<sub>SD</sub>(T)-Reference-Cited by-同舟云学术

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Temperature Monitoring of Multi-Chip SiC MOSFET Modules: On-Chip RTDs vs. V_SD(T)

Published:2023-09-04 Issue: Volume: Page:
ISSN:
Container-title:2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
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Author:

Baker Nick¹,Lemmon Andy¹,Iannuzzo Francesco²,Bęczkowski Szymon²,Austin John¹,Ostrander Lauren¹

Affiliation:

1. University of Alabama,Tuscaloosa,Alabama,USA

2. Aalborg University,Aalborg,Denmark

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264420.pdf?arnumber=10264420

Reference22 articles.

1. Power Semiconductor Module with Method for Manufacturing a Sintered Power Semiconductor Module;US9040338B2 Danfoss,0

2. Semiconductor Module;US20020167065A1 Infineon,0

3. Semiconductor Component and Method of Determining Temperature;US8155916B2 Infineon,0

4. Halbleiterbauelement in Chipbauweise;EP2565608B1 Siemens AG,0

5. A New Lifetime Model for Advanced Power Modules with Sintered Chips and Optimized Al Wire Bonds;scheuermann,2013

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