Cu Pumping Analysis During $\text{Cu}/\text{SiO}_{2}$ Hybrid Bonding Using In-Situ SPM Imaging-Reference-Cited by-同舟云学术

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Cu Pumping Analysis During $\text{Cu}/\text{SiO}_{2}$ Hybrid Bonding Using In-Situ SPM Imaging

Published:2023-09-11 Issue: Volume:64 Page:1-4
ISSN:
Container-title:2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC)
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Author:

Roshanghias Ali¹,Kaczynski Jaroslaw¹,Hangen Ude²

Affiliation:

1. Silicon Austria Labs GmbH,Villach,Austria

2. Bruker Nano GmbH,Aachen,Germany

Funder

Republic of Austria, the Styrian Business Promotion Agency (SFG)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10418252/10418244/10418382.pdf?arnumber=10418382

Reference13 articles.

1. Wafer level three-dimensional integration (3DI) using bumpless TSV interconnects for tera-scale generation

2. Enabling D2W / D2D Hybrid Bonding on manufacturing equipment based on simulated process parameters

3. Area-Selective Electroless Deposition of Cu for Hybrid Bonding

4. Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology

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