A novel contact field plate application in drain-extended-MOSFET transistors-Reference-Cited by-同舟云学术

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A novel contact field plate application in drain-extended-MOSFET transistors

Published:2017-05 Issue: Volume: Page:
ISSN:
Container-title:2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
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Author:

Wei Lin,Chao Cheng,Singh Upinder,Jain Ruchil,Leng Goh Li,Verma Purakh Raj

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7981281/7988866/07988957.pdf?arnumber=7988957

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Substrate Current Improvement and Investigation in Low Voltage Power Ldmos with A Novel Design;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. Experiments of a Novel Low-Voltage LDMOS With Ultrashallow Low-Resistance Path Modulated by Bulk Superjunction;IEEE Transactions on Electron Devices;2024-01

3. A Physics-Based Compact Model for the Static Drain Current in Heterojunction Barrier CNTFETs—Part II: Scattering, High-Field Effects, and Model Verification;IEEE Transactions on Electron Devices;2024-01

4. A High-Performance and Low HCI Degradation LDMOS Device With a Hybrid Field Plate;IEEE Journal of the Electron Devices Society;2024

5. Design and Simulation Optimization of an Ultra-Low Specific On-Resistance LDMOS Device;IEEE Journal of the Electron Devices Society;2024

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