Comparison of Different Ways Controlling the Switching Behaviour of a SiC MOSFET
Author:
Affiliation:
1. UNIVERSITY OF ROSTOCK,Rostock,Germany,18059
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9570185/9570186/09570526.pdf?arnumber=9570526
Reference7 articles.
1. Switching SiC MOSFETs Under Conditions of a High Power Module;maier;2018 20th European Conference on Power Electronics and Applications (EPE’18 ECCE Europe),2018
2. Comparison of SiC MOSFET gate-drive concepts to suppress parasitic turn-on in low inductance power modules
3. Faster switching with less overvoltage - operating a SiC-MOSFET at its speed limit
4. Active clamping method for SiC MOSFET high power modules - Benefits and Limits
5. Switching Behavior of SiC-MOSFETs in High Power Modules;stoermer;PCIM Europe 2018 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2018
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