High Isolation RF MEMS Capacitive Shunt Switch for 5G Communication
Author:
Affiliation:
1. College of Electronics and Information Engineering, Nanjing University of Aeronautics and Astronautics,Nanjing,China
2. National Institute for Scientific Research (INRS),University du Quebec,Montreal,Canada
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10249211/10249015/10250103.pdf?arnumber=10250103
Reference8 articles.
1. Etching holes effects for CMOS-MEMS capacitive structure;wan-chun;ICAST2011 22nd International Conference on Adaptive Structures and Technologies,2011
2. RF MEMS Capacitive Switches for Wide Temperature Range Applications Using a Standard Thin-Film Process
3. Design, optimization and simulation of a low-voltage shunt capacitive RF-MEMS switch
4. Analysis of RF MEMS shunt capacitive switch with uniform and non-uniform meanders
5. Capacitive RF MEMS Switches Fabricated in Standard 0.35-$\mu{\hbox{m}}$ CMOS Technology
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