Statistical Modeling of GaN HEMTs by Direct Transfer of Variations to Model Parameters
Author:
Affiliation:
1. Brandenburg University of Technology Cottbus-Senftenberg (BTU),Ulrich L. Rohde Chair of RF and Microwave Techniques,Germany
2. Leibniz-Institut für Höchstfrequenztechnik (FBH),Ferdinand-Braun-Institut gGmbH,Germany
Funder
Deutsche Forschungsgemeinschaft
Ministry of Education
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9783221/9783226/09783780.pdf?arnumber=9783780
Reference12 articles.
1. A Quasi-Physical Large-Signal Statistical Model for 0.15 μm AlGaN/GaN HEMTs Process
2. A GaN HEMTs Nonlinear Large-Signal Statistical Model and Its Application in S-Band Power Amplifier Design
3. Simulating Drain Lag of GaN HEMTs with physics-based ASM model;beleniotis;2020 15th European Microwave Integrated Circuits Conference (EuMIC),2021
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs;Semiconductor Science and Technology;2024-08-20
2. Parameterized Surrogate Models of Microstrip Structures for Electromagnetic-Based Power Amplifier Design and Statistical Analysis;Proceedings of SIE 2022;2023
3. Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Power Amplifier Design;Electronics;2022-09-08
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